2SK962 PDF

2SK Datasheet PDF Download – N-Channel Silicon Power MOS-FET, 2SK data sheet. N-channel Power MOSFET,V, 8A, W, 2Ω, TO* integrated diode. Your supplier of electronic components! Product range of home electro; audio, video, TV and PC accessories; accumulators; batteries and accupack renewal;.

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Education equipment Industrial test tools Catalogues Laboratory measuring equipment Measuring of environmental and ambient parameters Equipment for testing of medical equipment Calibration equipment Soldering equipment Telecommunication measuring equipment.

Soldering equipment Soldering irons Soldering stations HotAir stations Desoldering stations Multifunction stations more Comments 0 Write your comment. Telecommunication measuring equipment Cable and pipe tracing Cooper networks IT networks Optical networks Spectrum analysers more The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.


Drain – Source Voltage Vdss. Calibration equipment Electrical calibration equipment Pressure calibration equipment Temperature calibration equipment. Comfort Flexible options, including 2s,962 to door transportation. Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams.

(PDF) 2SK Datasheet PDF Download – N-Channel Silicon Power MOS-FET

Free technical support If something goes wrong, we will be ready and willing to help! Screw M3 PJP 0. Expected add to cart to know when it arrives. Fluke, Mikroelektronika, 2sk96 and Logitech.

2SK Datasheet pdf – N-Channel Silicon Power MOS-FET – Fuji Electric

FETs are unipolar transistors as they involve single-carrier-type operation. Drain-Source resistance Rds-on max.

Nut M3 PJP 0. Add to cart On stock. Cables, Accessories Cables Accessories.

2SK962 MOSFET. Datasheet pdf. Equivalent

Computer components Hardware Network Notebook-Battery. The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.


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It shares with the IGBT an isolated gate that makes it easy to drive. Gate threshold voltage Vgs th.

The customer is in the focus We want to make sure that customer is the center of attention. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages.